Panasonic 2SA2174J Instrukcja Użytkownika Pobierz pdf

Transistors

Publication date: November 2005 SJC00342AED 1

2SA2174J

Silicon PNP epitaxial planar type

For general ampliﬁcation

Complementary to 2SC6054J

 Features

 High forward current transfer ratio h

 SS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

 Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open)

CBO

−60

Collector-emitter voltage (Base open)

CEO

−50

Emitter-base voltage (Collector open)

EBO

−7

Collector current

−100

Peak collector current

−200

Collector power dissipation

125 mW

Junction temperature

125

°C

Storage temperature

stg

−55 to +125 °C

 Electrical Characteristics T

= 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open)

CBO

= −10 µA, I

= 0

−60

Collector-emitter voltage (Base open)

CEO

= −2 mA, I

= 0

−50

Emitter-base voltage (Collector open)

EBO

= −10 µA, I

= 0

− 7

Collector-base cutoff current (Emitter open)

CBO

= −20 V, I

= 0

− 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= −10 V, I

= 0

−100 µA

Forward current transfer ratio

= −10 V, I

= −2 mA 160 460



Collector-emitter saturation voltage

CE(sat)

= −100 mA, I

= −10 mA

− 0.2 − 0.5

Transition frequency

= −10 V, I

= 1 mA, f = 200 MHz 80 MHz

Collector output capacitance

(Common base, input open circuited)

= −10 V, I

= 0, f = 1 MHz 2.2 pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Marking Symbol: 7L

Unit: mm

1: Base

2: Emitter

3: Collector SSMini3-F1 Package

0.27±0.02

1 2

0.12

+0.03

–0.01

0.80±0.05(0.80)

0.85

1.60±0.05

0 to 0.02

0.10 max.

0.70

+0.05

–0.03

(0.375)

5°

1.60

+0.05

–0.03

1.00±0.05

(0.50)(0.50)

+0.05

–0.03

This product complies with the RoHS Directive (EU 2002/95/EC).

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2SA2174J 1

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Transistors Publication date: November 2005 SJC00342AED 12SA2174JSilicon PNP epitaxial planar typeFor general ampliﬁcationComplementary to 2SC6054J

Strona 2

2SA2174J 2 SJC00342AED PT  Ta IC  VCE IC  VBE VCE(sat)  IC hFE  IC Cob  VCB0 40 120800140406020100120802SA2174J_PC-TaCollector power dis

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Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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